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024 7 _ |a 10.1111/jace.17323
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100 1 _ |a Dash, Apurv
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245 _ _ |a Compressive creep of SiC whisker / Ti$_{3}$SiC$_{2}$ composites at high temperature in air
260 _ _ |a Westerville, Ohio
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500 _ _ |a Special Issue: Special section: Honoring the Legacy of Dr. Eric “Lou” Vance
520 _ _ |a The compressive creep of a SiC whisker (SiCw) reinforced Ti3SiC2 MAX phase‐based ceramic matrix composites (CMCs) was studied in the temperature range 1100‐1300°C in air for a stress range 20‐120 MPa. Ti3SiC2 containing 0, 10, and 20 vol% of SiCw was sintered by spark plasma sintering (SPS) for subsequent creep tests. The creep rate of Ti3SiC2 decreased by around two orders of magnitude with every additional 10 vol% of SiCw. The main creep mechanisms of monolithic Ti3SiC2 and the 10% CMCs appeared to be the same, whereas for the 20% material, a different mechanism is indicated by changes in stress exponents. The creep rates of 20% composites tend to converge to that of 10% at higher stress. Viscoplastic and viscoelastic creep is believed to be the deformation mechanism for the CMCs, whereas monolithic Ti3SiC2 might have undergone only dislocation‐based deformation. The rate controlling creep is believed to be dislocation based for all the materials which is also supported by similar activation energies in the range 650‐700 kJ/mol.
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700 1 _ |a Vaßen, Robert
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700 1 _ |a Gonzalez‐Julian, Jesus
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773 _ _ |a 10.1111/jace.17323
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