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@ARTICLE{Jiang:878242,
      author       = {Jiang, Ting-Ting and Wang, Jiang-Jing and Lu, Lu and Ma,
                      Chuan-Sheng and Zhang, Dan-Li and Rao, Feng and Jia,
                      Chun-Lin and Zhang, Wei},
      title        = {{P}rogressive amorphization of {G}e{S}b{T}e phase-change
                      material under electron beam irradiation},
      journal      = {APL materials},
      volume       = {7},
      number       = {8},
      issn         = {2166-532X},
      address      = {Melville, NY},
      publisher    = {AIP Publ.},
      reportid     = {FZJ-2020-02711},
      pages        = {081121 -},
      year         = {2019},
      abstract     = {Fast and reversible phase transitions in chalcogenide
                      phase-change materials (PCMs), in particular, Ge-Sb-Te
                      compounds, are not only of fundamental interests but also
                      make PCMs based random access memory a leading candidate for
                      nonvolatile memory and neuromorphic computing devices. To
                      RESET the memory cell, crystalline Ge-Sb-Te has to undergo
                      phase transitions first to a liquid state and then to an
                      amorphous state, corresponding to an abrupt change in
                      electrical resistance. In this work, we demonstrate a
                      progressive amorphization process in GeSb2Te4 thin films
                      under electron beam irradiation on a transmission electron
                      microscope (TEM). Melting is shown to be completely absent
                      by the in situ TEM experiments. The progressive
                      amorphization process resembles closely the cumulative
                      crystallization process that accompanies a continuous change
                      in electrical resistance. Our work suggests that if
                      displacement forces can be implemented properly, it should
                      be possible to emulate symmetric neuronal dynamics by using
                      PCMs.},
      cin          = {ER-C-1},
      ddc          = {600},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000483883800009},
      doi          = {10.1063/1.5102075},
      url          = {https://juser.fz-juelich.de/record/878242},
}