Journal Article

FZJ-2020-02711

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Progressive amorphization of GeSbTe phase-change material under electron beam irradiation

Jiang, T.-T. ; Wang, J.-J. (Corresponding author) ; Lu, L. ; Ma, C.-S. ; Zhang, D.-L. ; Rao, F. ; Jia, C.-L.FZJ* ; Zhang, W.

2019
AIP Publ. Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/25437  doi:10.1063/1.5102075

Abstract: Fast and reversible phase transitions in chalcogenide phase-change materials (PCMs), in particular, Ge-Sb-Te compounds, are not only of fundamental interests but also make PCMs based random access memory a leading candidate for nonvolatile memory and neuromorphic computing devices. To RESET the memory cell, crystalline Ge-Sb-Te has to undergo phase transitions first to a liquid state and then to an amorphous state, corresponding to an abrupt change in electrical resistance. In this work, we demonstrate a progressive amorphization process in GeSb2Te4 thin films under electron beam irradiation on a transmission electron microscope (TEM). Melting is shown to be completely absent by the in situ TEM experiments. The progressive amorphization process resembles closely the cumulative crystallization process that accompanies a continuous change in electrical resistance. Our work suggests that if displacement forces can be implemented properly, it should be possible to emulate symmetric neuronal dynamics by using PCMs.

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Contributing Institute(s):

1. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)
2. DFG project 167917811 - SFB 917: Resistiv schaltende Chalkogenide für zukünftige Elektronikanwendungen: Struktur, Kinetik und Bauelementskalierung "Nanoswitches" (167917811) (167917811)

Appears in the scientific report 2020

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