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@ARTICLE{Wang:878243,
      author       = {Wang, Jiang-Jing and Wang, Jun and Xu, Yazhi and Xin,
                      Tianjiao and Song, Zhitang and Pohlmann, Marc and Kaminski,
                      Marvin and Lu, Lu and Du, Hongchu and Jia, Chun-Lin and
                      Mazzarello, Riccardo and Wuttig, Matthias and Zhang, Wei},
      title        = {{L}ayer‐{S}witching {M}echanisms in {S}b 2 {T}e 3},
      journal      = {Physica status solidi / Rapid research letters Rapid
                      research letters},
      volume       = {13},
      number       = {10},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2020-02712},
      pages        = {1900320 -},
      year         = {2019},
      abstract     = {Interfacial phase‐change memory (iPCM) based on
                      layer‐structured Ge‐Sb‐Te crystals has been recently
                      proposed, offering an energy‐efficient implementation of
                      nonvolatile memory cells and supplementing the development
                      of Ge‐Sb‐Te‐based phase‐change random access
                      memories (PRAMs). Although the working principle of iPCM is
                      still under debate, it is believed that layer‐switching
                      plays a role in the switching process between the
                      low‐resistance and high‐resistance states of iPCM memory
                      cells. However, the role of Ge in forming swapped
                      bilayers—the key elements for layer‐switching—is not
                      yet clarified. This work manages to achieve
                      layer‐switching in Sb2Te3 thin films by manipulating the
                      formation of bilayer defects using magnetron sputtering and
                      post‐thermal annealing. By combining scanning transmission
                      electron microscopy (STEM) experiments with density
                      functional theory (DFT) calculations, the essential role of
                      Sb‐Te intermixing is elucidated in stabilizing swapped
                      bilayers at a low energy cost. In situ STEM experiments
                      provide a real‐time and real‐space view of dynamical
                      reconfiguration of van der Waals‐like gaps in Sb2Te3 thin
                      films under electron‐beam irradiation. The results show
                      that the Ge atoms are not necessary for the formation and
                      motion of swapped bilayers, providing atomic insights on the
                      layer‐switching mechanism in layer‐structured binary and
                      ternary group V‐ and IV–V‐tellurides for memory
                      applications.},
      cin          = {ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)
                      / DFG project 167917811 - SFB 917: Resistiv schaltende
                      Chalkogenide für zukünftige Elektronikanwendungen:
                      Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
                      (167917811)},
      pid          = {G:(DE-HGF)POF3-143 / G:(GEPRIS)167917811},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000504860900019},
      doi          = {10.1002/pssr.201900320},
      url          = {https://juser.fz-juelich.de/record/878243},
}