Journal Article

FZJ-2020-02983

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Visualization and investigation of the non-thermalized electrons in an InAs nanowire by scanning gate microscopy

Zhukov, A. A. (Corresponding author) ; Volk, C. ; Winden, A. ; Hardtdegen, H.FZJ* ; Schäpers, T.FZJ*

2019
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.1088/1361-648X/ab2b6a

Abstract: We performed scanning gate microscopy measurements on an InAs nanowire at T  =  4.2 K in an external magnetic field. We visualizeded non-thermalized electrons passed under narrow metallic contact. It was found that, for such kind of electrons, suppression of the weak antilocalization quantum correction occurs with a magnetic field at least three times smaller than the corresponding one measured for the whole electronic system of the wire.

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Contributing Institute(s):

1. Materialwissenschaft u. Werkstofftechnik (ER-C-2)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2020

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; National-Konsortium ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Web of Science Core Collection

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