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000008826 084__ $$2WoS$$aPhysics, Applied
000008826 1001_ $$0P:(DE-HGF)0$$aZurbuchen, M.A.$$b0
000008826 245__ $$aSynthesis, structure, and electrical behavior of Sr4Bi4Ti7O24
000008826 260__ $$aMelville, NY$$bAmerican Institute of Physics$$c2010
000008826 300__ $$a024106
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000008826 440_0 $$03051$$aJournal of Applied Physics$$v107$$x0021-8979$$y2
000008826 500__ $$aThis work was supported by The Aerospace Corporation's Independent Research and Development Program. The authors also gratefully acknowledge the financial support of the National Science Foundation through Grant Nos. DMR-0507146 and DMR-0820404 and the U.S. Department of Energy through Contract No. W-31-109-ENG-38. Work at Argonne National Laboratory, and use of Argonne's Center for Nanoscale Materials and Electron Microscopy Center was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The authors thank Professor Susan Trolier- McKinstry for helpful discussions.
000008826 520__ $$aAn n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described.
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000008826 65320 $$2Author$$abismuth compounds
000008826 65320 $$2Author$$aepitaxial layers
000008826 65320 $$2Author$$aferroelectric capacitors
000008826 65320 $$2Author$$aferroelectric thin films
000008826 65320 $$2Author$$aferroelectric transitions
000008826 65320 $$2Author$$afinite element analysis
000008826 65320 $$2Author$$ainsulating thin films
000008826 65320 $$2Author$$arelaxor ferroelectrics
000008826 65320 $$2Author$$astrontium compounds
000008826 65320 $$2Author$$atransmission electron microscopy
000008826 65320 $$2Author$$aX-ray diffraction
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000008826 7001_ $$0P:(DE-HGF)0$$aSherman, V.O.$$b1
000008826 7001_ $$0P:(DE-HGF)0$$aTagantsev, A.K.$$b2
000008826 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b3$$uFZJ
000008826 7001_ $$0P:(DE-HGF)0$$aFong, D.$$b4
000008826 7001_ $$0P:(DE-HGF)0$$aStreiffer, S.K.$$b5
000008826 7001_ $$0P:(DE-HGF)0$$aJia, Y.$$b6
000008826 7001_ $$0P:(DE-HGF)0$$aComstock, D.J.$$b7
000008826 7001_ $$0P:(DE-HGF)0$$aTian, W.$$b8
000008826 7001_ $$0P:(DE-HGF)0$$aSchlom, D.G.$$b9
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