Journal Article PreJuSER-8826

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24

 ;  ;  ;  ;  ;  ;  ;  ;  ;

2010
American Institute of Physics Melville, NY

Journal of applied physics 107, 024106 () [10.1063/1.3273388]

This record in other databases:  

Please use a persistent id in citations:   doi:

Abstract: An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described.

Keyword(s): J ; bismuth compounds (auto) ; epitaxial layers (auto) ; ferroelectric capacitors (auto) ; ferroelectric thin films (auto) ; ferroelectric transitions (auto) ; finite element analysis (auto) ; insulating thin films (auto) ; relaxor ferroelectrics (auto) ; strontium compounds (auto) ; transmission electron microscopy (auto) ; X-ray diffraction (auto)

Classification:

Note: This work was supported by The Aerospace Corporation's Independent Research and Development Program. The authors also gratefully acknowledge the financial support of the National Science Foundation through Grant Nos. DMR-0507146 and DMR-0820404 and the U.S. Department of Energy through Contract No. W-31-109-ENG-38. Work at Argonne National Laboratory, and use of Argonne's Center for Nanoscale Materials and Electron Microscopy Center was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The authors thank Professor Susan Trolier- McKinstry for helpful discussions.

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (IBN-1)
  2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010
Database coverage:
OpenAccess
Click to display QR Code for this record

The record appears in these collections:
Document types > Articles > Journal Article
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
Open Access

 Record created 2012-11-13, last modified 2020-04-23