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@ARTICLE{Zurbuchen:8826,
      author       = {Zurbuchen, M.A. and Sherman, V.O. and Tagantsev, A.K. and
                      Schubert, J. and Fong, D. and Streiffer, S.K. and Jia, Y.
                      and Comstock, D.J. and Tian, W. and Schlom, D.G.},
      title        = {{S}ynthesis, structure, and electrical behavior of
                      {S}r4{B}i4{T}i7{O}24},
      journal      = {Journal of applied physics},
      volume       = {107},
      issn         = {0021-8979},
      address      = {Melville, NY},
      publisher    = {American Institute of Physics},
      reportid     = {PreJuSER-8826},
      pages        = {024106},
      year         = {2010},
      note         = {This work was supported by The Aerospace Corporation's
                      Independent Research and Development Program. The authors
                      also gratefully acknowledge the financial support of the
                      National Science Foundation through Grant Nos. DMR-0507146
                      and DMR-0820404 and the U.S. Department of Energy through
                      Contract No. W-31-109-ENG-38. Work at Argonne National
                      Laboratory, and use of Argonne's Center for Nanoscale
                      Materials and Electron Microscopy Center was supported by
                      the U.S. Department of Energy, Office of Science, Office of
                      Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.
                      The authors thank Professor Susan Trolier- McKinstry for
                      helpful discussions.},
      abstract     = {An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was
                      synthesized as an epitaxial (001)-oriented film. This phase
                      and its purity were confirmed by x-ray diffraction and
                      transmission electron microscopy. The material is
                      ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the
                      (001) plane and a paraelectric-to-ferroelectric transition
                      temperature of T-C=324 K. Some indications of relaxorlike
                      behavior are observed. Such behavior is out of character for
                      Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the
                      bulk behavior of doped SrTiO3, implying a spatial limit to
                      the elastic interlayer interactions in these layered oxides.
                      A finite-element solution to the interpretation of data from
                      interdigitated capacitors on thin films is also described.},
      keywords     = {J (WoSType)},
      cin          = {IBN-1 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)VDB799 / $I:(DE-82)080009_20140620$},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Physics, Applied},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000274180600084},
      doi          = {10.1063/1.3273388},
      url          = {https://juser.fz-juelich.de/record/8826},
}