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| Hauptseite > Publikationsdatenbank > Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24 > print |
| Hauptseite > Publikationsdatenbank > Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24 > print |
| 001 | 8826 | ||
| 005 | 20200423202702.0 | ||
| 024 | 7 | _ | |a 10.1063/1.3273388 |2 DOI |
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| 084 | _ | _ | |2 WoS |a Physics, Applied |
| 100 | 1 | _ | |0 P:(DE-HGF)0 |a Zurbuchen, M.A. |b 0 |
| 245 | _ | _ | |a Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24 |
| 260 | _ | _ | |a Melville, NY |b American Institute of Physics |c 2010 |
| 300 | _ | _ | |a 024106 |
| 336 | 7 | _ | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) |
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| 440 | _ | 0 | |0 3051 |a Journal of Applied Physics |v 107 |x 0021-8979 |y 2 |
| 500 | _ | _ | |a This work was supported by The Aerospace Corporation's Independent Research and Development Program. The authors also gratefully acknowledge the financial support of the National Science Foundation through Grant Nos. DMR-0507146 and DMR-0820404 and the U.S. Department of Energy through Contract No. W-31-109-ENG-38. Work at Argonne National Laboratory, and use of Argonne's Center for Nanoscale Materials and Electron Microscopy Center was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357. The authors thank Professor Susan Trolier- McKinstry for helpful discussions. |
| 520 | _ | _ | |a An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described. |
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| 653 | 2 | 0 | |2 Author |a bismuth compounds |
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| 653 | 2 | 0 | |2 Author |a ferroelectric capacitors |
| 653 | 2 | 0 | |2 Author |a ferroelectric thin films |
| 653 | 2 | 0 | |2 Author |a ferroelectric transitions |
| 653 | 2 | 0 | |2 Author |a finite element analysis |
| 653 | 2 | 0 | |2 Author |a insulating thin films |
| 653 | 2 | 0 | |2 Author |a relaxor ferroelectrics |
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