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Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM).

CoordinatorWaser, R.
Grant period2020-05-01 - 2021-04-30
Funding bodyVSR/JARA
IdentifierG:(DE-Juel1)jpgi70_20200501

⇦ Modelling the Valency Change Memory Effect in Resistive Switching Random Access Memory (RRAM)

Note: JSC computation time grant
 

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IEEE transactions on electron devices 67(10), 4208 - 4215 () [10.1109/TED.2020.3018096]  Download fulltext Files BibTeX | EndNote: XML, Text | RIS

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 Record created 2020-09-21, last modified 2020-09-21
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