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000884989 1001_ $$0P:(DE-HGF)0$$aGomeniuk, Y.Y.$$b0
000884989 245__ $$aElectrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
000884989 260__ $$aZug$$bScitec Publ.$$c2011
000884989 300__ $$a87 - 93
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000884989 4900_ $$0PERI:(DE-600)2265002-7$$aAdvanced materials research$$v276$$x1662-8985
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000884989 7001_ $$0P:(DE-HGF)0$$aGomeniuk, Y.V.$$b1
000884989 7001_ $$0P:(DE-HGF)0$$aNazarov, A.N.$$b2
000884989 7001_ $$0P:(DE-HGF)0$$aHurley, P.K.$$b3
000884989 7001_ $$0P:(DE-HGF)0$$acherkaoui, K.$$b4
000884989 7001_ $$0P:(DE-HGF)0$$aMonaghan, S.$$b5
000884989 7001_ $$0P:(DE-HGF)0$$aHellström, P.E.$$b6
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000884989 7001_ $$0P:(DE-Juel1)VDB96623$$aLopes, J.M.J.$$b9$$uFZJ
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