Contribution to a book

FZJ-2020-03393

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs

Gomeniuk, Y. Y. ; Gomeniuk, Y. V. ; Nazarov, A. N. ; Hurley, P. K. ; cherkaoui, K. ; Monaghan, S. ; Hellström, P. E. ; Gottlob, H. D. B. ; Schubert, J.FZJ* ; Lopes, J. M. J.FZJ*

2011
Scitec Publ. Zug

This record in other databases:  

Please use a persistent id in citations: doi:10.4028/www.scientific.net/AMR.276.87

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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Database coverage:
Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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