TY  - CHAP
AU  - Gomeniuk, Y.Y.
AU  - Gomeniuk, Y.V.
AU  - Nazarov, A.N.
AU  - Hurley, P.K.
AU  - cherkaoui, K.
AU  - Monaghan, S.
AU  - Hellström, P.E.
AU  - Gottlob, H.D.B.
AU  - Schubert, J.
AU  - Lopes, J.M.J.
TI  - Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
VL  - 276
SN  - 1662-8985
CY  - Zug
PB  - Scitec Publ.
M1  - FZJ-2020-03393
T2  - Advanced materials research
SP  - 87 - 93
PY  - 2011
N1  - Record converted from VDB: 12.11.2012
LB  - PUB:(DE-HGF)7
UR  - <Go to ISI:>//WOS:000303285000010
DO  - DOI:10.4028/www.scientific.net/AMR.276.87
UR  - https://juser.fz-juelich.de/record/884989
ER  -