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@INBOOK{Gomeniuk:884989,
      author       = {Gomeniuk, Y.Y. and Gomeniuk, Y.V. and Nazarov, A.N. and
                      Hurley, P.K. and cherkaoui, K. and Monaghan, S. and
                      Hellström, P.E. and Gottlob, H.D.B. and Schubert, J. and
                      Lopes, J.M.J.},
      title        = {{E}lectrical properties of high-k {L}a{L}u{O}3 gate oxide
                      for {SOI} {MOSFET}s},
      volume       = {276},
      issn         = {1662-8985},
      address      = {Zug},
      publisher    = {Scitec Publ.},
      reportid     = {FZJ-2020-03393},
      series       = {Advanced materials research},
      pages        = {87 - 93},
      year         = {2011},
      note         = {Record converted from VDB: 12.11.2012},
      cin          = {PGI-9},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)7},
      UT           = {WOS:000303285000010},
      doi          = {10.4028/www.scientific.net/AMR.276.87},
      url          = {https://juser.fz-juelich.de/record/884989},
}