Hauptseite > Publikationsdatenbank > Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs > print

001     884989
005     20201003142456.0
024 7 _ |a 10.4028/www.scientific.net/AMR.276.87
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024 7 _ |a 1662-8985
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037 _ _ |a FZJ-2020-03393
082 _ _ |a 600
100 1 _ |a Gomeniuk, Y.Y.
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245 _ _ |a Electrical properties of high-k LaLuO3 gate oxide for SOI MOSFETs
260 _ _ |a Zug
|c 2011
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300 _ _ |a 87 - 93
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490 0 _ |a Advanced materials research
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700 1 _ |a Gomeniuk, Y.V.
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700 1 _ |a Nazarov, A.N.
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700 1 _ |a Hurley, P.K.
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700 1 _ |a cherkaoui, K.
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700 1 _ |a Monaghan, S.
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700 1 _ |a Hellström, P.E.
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700 1 _ |a Gottlob, H.D.B.
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700 1 _ |a Schubert, J.
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700 1 _ |a Lopes, J.M.J.
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