Contribution to a book

FZJ-2020-03646

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical characterization of TbScO3/TiN gate stacks in MOS capacitors and MOSFETs on strained and unstrained SOI

Durgun Özben, E.FZJ* ; Nichau, A.FZJ* ; Lopes, J. M. J.FZJ* ; Lenk, S.FZJ* ; Besmehn, A.FZJ* ; Bourdelle, K. K. ; Zhao, Q. T.FZJ* ; Schubert, J.FZJ* ; Mantl, S.FZJ*

2010
Electrochemical Society (ECS) Pennington, NJ

This record in other databases:    

Please use a persistent id in citations: doi:10.1149/1.3481606

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (IBN-1)
2. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
3. Zentralabteilung für Chemische Analysen (ZCH)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2010

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