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| Hauptseite > Publikationsdatenbank > Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices |
| Hauptseite > Publikationsdatenbank > Electrical and structural properties of ternary rare-earth oxides on Si and higher mobility substrates and their integration as high-k gate dielectrics in MOSFET devices |
| Contribution to a book | FZJ-2020-03652 |
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2011
Electrochemical Society (ECS)
Pennington, NJ
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