Home > Publications database > From thin relaxed SiGe buffer layers to Strained Silicon directly on Oxide
 
Contribution to a book FZJ-2020-03660
http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
From thin relaxed SiGe buffer layers to Strained Silicon directly on Oxide

 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;  ;

2006
Electrochemical Society (ECS) Pennington, NJ

Pennington, NJ : Electrochemical Society (ECS), ECS transactions 3, 1047 - 1055 ()

Classification:

Note: Record converted from VDB: 12.11.2012
Contributing Institute(s):
  1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
  2. Center of Nanoelectronic Systems for Information Technology (CNI)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Click to display QR Code for this record

The record appears in these collections:
Document types > Books > Contribution to a book
Workflow collections > Public records
Publications database
 Record created 2020-10-02, last modified 2020-10-03
Similar records



Rate this document:

Rate this document:
1
2
3
4
5
 
(Not yet reviewed)
JuSER :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.7 | join2_v2508-8-g6303aad
Maintained by juser@fz-juelich.de

Impressum | Data Privacy Policy
This site is also available in the following languages:
Deutsch  English