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@INBOOK{Mantl:885256,
      author       = {Mantl, S. and Buca, D. and Holländer, B. and Lenk, S. and
                      Hueging, N. and Luysberg, M. and Carius, R. and Loo, R. and
                      Caymax, M. and Schäfer, H. and Radu, I. and Reiche, M. and
                      Christiansen, S. H. and Gösele, U.},
      title        = {{F}rom thin relaxed {S}i{G}e buffer layers to {S}trained
                      {S}ilicon directly on {O}xide},
      volume       = {3},
      issn         = {1938-5862},
      address      = {Pennington, NJ},
      publisher    = {Electrochemical Society (ECS)},
      reportid     = {FZJ-2020-03660},
      series       = {ECS transactions},
      pages        = {1047 - 1055},
      year         = {2006},
      note         = {Record converted from VDB: 12.11.2012},
      cin          = {CNI / ISG-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)VDB381 / I:(DE-Juel1)VDB41},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      typ          = {PUB:(DE-HGF)7},
      url          = {https://juser.fz-juelich.de/record/885256},
}