TY  - JOUR
AU  - Böttger, Ulrich
AU  - von Witzleben, Moritz
AU  - Havel, Viktor
AU  - Fleck, Karsten
AU  - Rana, Vikas
AU  - Waser, R.
AU  - Menzel, Stephan
TI  - Picosecond multilevel resistive switching in tantalum oxide thin films
JO  - Scientific reports
VL  - 10
IS  - 1
SN  - 2045-2322
CY  - [London]
PB  - Macmillan Publishers Limited, part of Springer Nature
M1  - FZJ-2020-03872
SP  - 16391
PY  - 2020
AB  - The increasing demand for high-density data storage leads to an increasing interest in novel memory concepts with high scalability and the opportunity of storing multiple bits in one cell. A promising candidate is the redox-based resistive switch repositing the information in form of different resistance states. For reliable programming, the underlying physical parameters need to be understood. We reveal that the programmable resistance states are linked to internal series resistances and the fundamental nonlinear switching kinetics. The switching kinetics of Ta2O5-based cells was investigated in a wide range over 15 orders of magnitude from 105 s to 250 ps. The capacitive charging time of our device limits the direct observation of the set time below 770 ps, however, we found indication for an intrinsic switching speed of 10 ps at a stimulus of 3 V. On all time scales, multi-bit data storage capabilities were demonstrated. The elucidated link between fundamental material properties and multi-bit data storage paves the way for designing resistive switches for memory and neuromorphic applications.
LB  - PUB:(DE-HGF)16
C6  - pmid:33009437
UR  - <Go to ISI:>//WOS:000577150800006
DO  - DOI:10.1038/s41598-020-73254-2
UR  - https://juser.fz-juelich.de/record/885491
ER  -