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@ARTICLE{Bttger:885491,
      author       = {Böttger, Ulrich and von Witzleben, Moritz and Havel,
                      Viktor and Fleck, Karsten and Rana, Vikas and Waser, R. and
                      Menzel, Stephan},
      title        = {{P}icosecond multilevel resistive switching in tantalum
                      oxide thin films},
      journal      = {Scientific reports},
      volume       = {10},
      number       = {1},
      issn         = {2045-2322},
      address      = {[London]},
      publisher    = {Macmillan Publishers Limited, part of Springer Nature},
      reportid     = {FZJ-2020-03872},
      pages        = {16391},
      year         = {2020},
      abstract     = {The increasing demand for high-density data storage leads
                      to an increasing interest in novel memory concepts with high
                      scalability and the opportunity of storing multiple bits in
                      one cell. A promising candidate is the redox-based resistive
                      switch repositing the information in form of different
                      resistance states. For reliable programming, the underlying
                      physical parameters need to be understood. We reveal that
                      the programmable resistance states are linked to internal
                      series resistances and the fundamental nonlinear switching
                      kinetics. The switching kinetics of Ta2O5-based cells was
                      investigated in a wide range over 15 orders of magnitude
                      from 105 s to 250 ps. The capacitive charging time of our
                      device limits the direct observation of the set time below
                      770 ps, however, we found indication for an intrinsic
                      switching speed of 10 ps at a stimulus of 3 V. On all time
                      scales, multi-bit data storage capabilities were
                      demonstrated. The elucidated link between fundamental
                      material properties and multi-bit data storage paves the way
                      for designing resistive switches for memory and neuromorphic
                      applications.},
      cin          = {PGI-7 / JARA-FIT / PGI-10},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-10-20170113},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:33009437},
      UT           = {WOS:000577150800006},
      doi          = {10.1038/s41598-020-73254-2},
      url          = {https://juser.fz-juelich.de/record/885491},
}