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@ARTICLE{Wilhelm:886104,
author = {Wilhelm, Marek and Giesen, Margret and Duchoň, Tomáš and
Moors, Marco and Mueller, David N. and Hackl, Johanna and
Baeumer, Christoph and Hamed, Mai Hussein and Cao, Lei and
Zhang, Hengbo and Petracic, Oleg and Glöß, Maria and
Cramm, Stefan and Nemšák, Slavomír and Wiemann, Carsten
and Dittmann, Regina and Schneider, Claus M. and Müller,
Martina},
title = {{P}hotoemission electron microscopy of magneto-ionic
effects in {L}a0.7{S}r0.3{M}n{O}3},
journal = {APL materials},
volume = {8},
number = {11},
issn = {2166-532X},
address = {Melville, NY},
publisher = {AIP Publ.},
reportid = {FZJ-2020-04272},
pages = {111102},
year = {2020},
abstract = {Magneto-ionic control of magnetism is a promising route
toward the realization of non-volatile memory and memristive
devices. Magneto-ionic oxides are particularly interesting
for this purpose, exhibiting magnetic switching coupled to
resistive switching, with the latter emerging as a
perturbation of the oxygen vacancy concentration. Here, we
report on electric-field-induced magnetic switching in a
La0.7Sr0.3MnO3 (LSMO) thin film. Correlating magnetic and
chemical information via photoemission electron microscopy,
we show that applying a positive voltage perpendicular to
the film surface of LSMO results in the change in the
valence of the Mn ions accompanied by a metal-to-insulator
transition and a loss of magnetic ordering. Importantly, we
demonstrate that the voltage amplitude provides granular
control of the phenomena, enabling fine-tuning of the
surface electronic structure. Our study provides valuable
insight into the switching capabilities of LSMO that can be
utilized in magneto-ionic devices.},
cin = {PGI-6 / PGI-7 / JCNS-2 / PGI-4 / JARA-FIT / JARA-FIT},
ddc = {600},
cid = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)PGI-7-20110106 /
I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)PGI-4-20110106 /
$I:(DE-82)080009_20140620$ / I:(DE-Juel1)VDB881},
pnm = {522 - Controlling Spin-Based Phenomena (POF3-522) / DFG
project 167917811 - SFB 917: Resistiv schaltende
Chalkogenide für zukünftige Elektronikanwendungen:
Struktur, Kinetik und Bauelementskalierung "Nanoswitches"
(167917811)},
pid = {G:(DE-HGF)POF3-522 / G:(GEPRIS)167917811},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000589751800001},
doi = {10.1063/5.0022150},
url = {https://juser.fz-juelich.de/record/886104},
}