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000887967 0247_ $$2doi$$a10.22323/1.370.0126
000887967 037__ $$aFZJ-2020-04553
000887967 1001_ $$0P:(DE-HGF)0$$aCalvo, Daniela$$b0
000887967 1112_ $$aTopical Workshop on Electronics for Particle Physics$$cSantiago de Compostela - Spain$$d2019-09-02 - 2019-09-06$$gTWEPP$$wSpain
000887967 245__ $$aStudy of SEU effects in circuits developed in 110 nm CMOS technology
000887967 260__ $$bSissa Medialab Trieste, Italy$$c2020
000887967 29510 $$aProceedings of Topical Workshop on Electronics for Particle Physics — PoS (TWEPP2019)
000887967 300__ $$a5
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000887967 520__ $$aChannel configuration registers of a full size prototype for the custom readout circuit of silicon double-sided microstrips of PANDA Micro Vertex Detector were tested for upset effects. The ASIC is developed in a commercial 110 nm CMOS technology and implements both Triple Modular Redundancy and Hamming Encoding techniques. Results from tests with ion and proton beams show the robustness level of these two techniques against the upset effects and allow the evaluation of that commercial 110 nm technology in the PANDA experiment.
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000887967 7001_ $$0P:(DE-HGF)0$$aDE REMIGIS, Paolo$$b1
000887967 7001_ $$0P:(DE-HGF)0$$aFisichella, Maria$$b2
000887967 7001_ $$0P:(DE-HGF)0$$aWheadon, Richard$$b3
000887967 7001_ $$0P:(DE-Juel1)145837$$aZambanini, André$$b4$$ufzj
000887967 7001_ $$0P:(DE-HGF)0$$aMattiazzo, Serena$$b5
000887967 7001_ $$0P:(DE-HGF)0$$aVerroi, Enrico$$b6
000887967 7001_ $$0P:(DE-HGF)0$$aTommasino, Francesco$$b7
000887967 773__ $$a10.22323/1.370.0126
000887967 8564_ $$uhttps://pos.sissa.it/370/126
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