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@INPROCEEDINGS{Calvo:887967,
author = {Calvo, Daniela and DE REMIGIS, Paolo and Fisichella, Maria
and Wheadon, Richard and Zambanini, André and Mattiazzo,
Serena and Verroi, Enrico and Tommasino, Francesco},
title = {{S}tudy of {SEU} effects in circuits developed in 110 nm
{CMOS} technology},
publisher = {Sissa Medialab Trieste, Italy},
reportid = {FZJ-2020-04553},
pages = {5},
year = {2020},
comment = {Proceedings of Topical Workshop on Electronics for Particle
Physics — PoS (TWEPP2019)},
booktitle = {Proceedings of Topical Workshop on
Electronics for Particle Physics —
PoS (TWEPP2019)},
abstract = {Channel configuration registers of a full size prototype
for the custom readout circuit of silicon double-sided
microstrips of PANDA Micro Vertex Detector were tested for
upset effects. The ASIC is developed in a commercial 110 nm
CMOS technology and implements both Triple Modular
Redundancy and Hamming Encoding techniques. Results from
tests with ion and proton beams show the robustness level of
these two techniques against the upset effects and allow the
evaluation of that commercial 110 nm technology in the PANDA
experiment.},
month = {Sep},
date = {2019-09-02},
organization = {Topical Workshop on Electronics for
Particle Physics, Santiago de
Compostela - Spain (Spain), 2 Sep 2019
- 6 Sep 2019},
pnm = {632 - Detector technology and systems (POF3-632) / 6G12 -
FAIR (POF3-624)},
pid = {G:(DE-HGF)POF3-632 / G:(DE-HGF)POF3-6G12},
typ = {PUB:(DE-HGF)8 / PUB:(DE-HGF)7},
doi = {10.22323/1.370.0126},
url = {https://juser.fz-juelich.de/record/887967},
}