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@ARTICLE{Kirchartz:888751,
author = {Kirchartz, Thomas and Cahen, David},
title = {{M}inimum doping densities for p–n junctions},
journal = {Nature energy},
volume = {5},
issn = {2058-7546},
address = {London},
publisher = {Nature Publishing Group},
reportid = {FZJ-2020-05180},
pages = {973–975},
year = {2020},
abstract = {In their Article, Cui et al.1 describe the fabrication and
characterization of planar p–n junction solar cells based
on lead-halide perovskites. The formation of a p–n
junction is noteworthy given the doping densities, measured
using the Hall effect, which were reported to vary from
ND = 1 × 1012 cm−3 to 8 × 1012 cm−3
for the solution-processed n-type layer and to equal
NA = 8 × 109 cm−3 for the evaporated p-type
layer. Although these devices outperform their counterparts
that are supposedly undoped, the results raise three
important questions. Are the reported doping densities high
enough to change the electrostatic potential distribution in
the device from that of undoped ones? Are the doping
densities high enough for the p–n junction to remain
intact under typical photovoltaic operation conditions? Is a
p–n junction beneficial for photovoltaic performance given
the typical properties of lead-halide perovskites.},
cin = {IEK-5},
ddc = {330},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000584361800003},
doi = {10.1038/s41560-020-00708-2},
url = {https://juser.fz-juelich.de/record/888751},
}