TY  - JOUR
AU  - Kunz, T.
AU  - Hessmann, M. T.
AU  - Meidel, B.
AU  - Brabec, C. J.
TI  - Micro-Raman mapping on layers for crystalline silicon thin-film solar cells
JO  - Journal of crystal growth
VL  - 314
IS  - 1
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2021-00728
SP  - 53 - 57
PY  - 2011
AB  - Micro-Raman mappings have been used for characterization of our layers system developed for thin-film silicon solar cells. For the cubic SiC barrier layer a preferential orientation of the grains in 〈1 1 1〉 direction normal to the substrate was revealed. A high density of stacking faults resulted in the splitting of transversal optical (TO)-phonon modes, usually only observed in several non-cubic SiC polytypes. Within the silicon layers, which were obtained by zone melting recrystallization (ZMR) and subsequent epitaxial growth, a high residual stress of about 625 MPa was measured near the boundary towards the SiC layer. Outside of this boundary no residual stress could be detected, in spite of commonly found twin boundaries. Thus the main origin of residual stress in the silicon layers is due to the different expansion coefficients of the respective layers, while grain boundaries have no dominant effect.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000286853400011
DO  - DOI:10.1016/j.jcrysgro.2010.12.019
UR  - https://juser.fz-juelich.de/record/890139
ER  -