Journal Article

FZJ-2021-00728

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Micro-Raman mapping on layers for crystalline silicon thin-film solar cells

Kunz, T. (Corresponding author) ; Hessmann, M. T. ; Meidel, B. ; Brabec, C. J.FZJ*

2011
Elsevier Amsterdam [u.a.]

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Please use a persistent id in citations: doi:10.1016/j.jcrysgro.2010.12.019

Abstract: Micro-Raman mappings have been used for characterization of our layers system developed for thin-film silicon solar cells. For the cubic SiC barrier layer a preferential orientation of the grains in 〈1 1 1〉 direction normal to the substrate was revealed. A high density of stacking faults resulted in the splitting of transversal optical (TO)-phonon modes, usually only observed in several non-cubic SiC polytypes. Within the silicon layers, which were obtained by zone melting recrystallization (ZMR) and subsequent epitaxial growth, a high residual stress of about 625 MPa was measured near the boundary towards the SiC layer. Outside of this boundary no residual stress could be detected, in spite of commonly found twin boundaries. Thus the main origin of residual stress in the silicon layers is due to the different expansion coefficients of the respective layers, while grain boundaries have no dominant effect.

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Contributing Institute(s):

1. Helmholtz-Institut Erlangen-Nürnberg Erneuerbare Energien (IEK-11)

Research Program(s):

1. 121 - Solar cells of the next generation (POF3-121) (POF3-121)

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Database coverage:
; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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