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@ARTICLE{Kunz:890139,
author = {Kunz, T. and Hessmann, M. T. and Meidel, B. and Brabec, C.
J.},
title = {{M}icro-{R}aman mapping on layers for crystalline silicon
thin-film solar cells},
journal = {Journal of crystal growth},
volume = {314},
number = {1},
issn = {0022-0248},
address = {Amsterdam [u.a.]},
publisher = {Elsevier},
reportid = {FZJ-2021-00728},
pages = {53 - 57},
year = {2011},
abstract = {Micro-Raman mappings have been used for characterization of
our layers system developed for thin-film silicon solar
cells. For the cubic SiC barrier layer a preferential
orientation of the grains in 〈1 1 1〉 direction normal to
the substrate was revealed. A high density of stacking
faults resulted in the splitting of transversal optical
(TO)-phonon modes, usually only observed in several
non-cubic SiC polytypes. Within the silicon layers, which
were obtained by zone melting recrystallization (ZMR) and
subsequent epitaxial growth, a high residual stress of about
625 MPa was measured near the boundary towards the SiC
layer. Outside of this boundary no residual stress could be
detected, in spite of commonly found twin boundaries. Thus
the main origin of residual stress in the silicon layers is
due to the different expansion coefficients of the
respective layers, while grain boundaries have no dominant
effect.},
cin = {IEK-11},
ddc = {540},
cid = {I:(DE-Juel1)IEK-11-20140314},
pnm = {121 - Solar cells of the next generation (POF3-121)},
pid = {G:(DE-HGF)POF3-121},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000286853400011},
doi = {10.1016/j.jcrysgro.2010.12.019},
url = {https://juser.fz-juelich.de/record/890139},
}