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@ARTICLE{Yao:890291,
      author       = {Yao, Zhirong and Duan, Weiyuan and Steuter, Paul and
                      Hüpkes, Jürgen and Lambertz, Andreas and Bittkau, Karsten
                      and Pomaska, Manuel and Qiu, Depeng and Qiu, Kaifu and Wu,
                      Zhuopeng and Shen, Hui and Rau, Uwe and Ding, Kaining},
      title        = {{I}nfluence of {O}xygen on {S}puttered {T}itanium‐{D}oped
                      {I}ndium {O}xide {T}hin {F}ilms and {T}heir {A}pplication in
                      {S}ilicon {H}eterojunction {S}olar {C}ells},
      journal      = {Solar RRL},
      volume       = {5},
      number       = {1},
      issn         = {2367-198X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2021-00872},
      pages        = {2000501 -},
      year         = {2021},
      abstract     = {One of the challenges in fabricating high‐performance
                      n‐type silicon heterojunction (SHJ) solar cells is
                      developing a high‐quality transparent conductive oxide
                      (TCO) electrode. Herein, the development and application of
                      low‐temperature sputtered titanium‐doped indium oxide
                      (ITiO) in n‐type, rear junction SHJ solar cells as a
                      function of the oxygen flow ratio is presented. The
                      microstructure, morphology, and optoelectronic properties
                      are analyzed. The grain size of ITiO thin films decreases
                      rapidly as the oxygen flow ratio is increased. Compared with
                      an indium tin oxide (ITO) thin film, ITiO shows a superior
                      balance in achieving excellent optoelectronic properties by
                      reducing film resistivity but maintaining weak absorption.
                      Higher fill factor is obtained by substituting ITiO for ITO
                      as the front electrode in SHJ solar cells, which is mainly
                      due to the improved carrier transport. Resistivity
                      contributions of front‐side vertical and lateral carrier
                      transport are disclosed by Quokka3 simulation. A champion
                      cell efficiency of $23.81\%$ with ITiO is achieved, which is
                      so far the highest efficiency among the application of ITiO
                      in SHJ solar cells to the best of our knowledge. The study
                      demonstrates that ITiO is a promising TCO candidate for SHJ
                      solar cells.},
      cin          = {IEK-5},
      ddc          = {600},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Photovoltaik und Windenergie (POF4-121)},
      pid          = {G:(DE-HGF)POF4-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000587744700001},
      doi          = {10.1002/solr.202000501},
      url          = {https://juser.fz-juelich.de/record/890291},
}