Contribution to a conference proceedings FZJ-2021-01386

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Magnetic-Field Enhancement of THz Surface Emission in Highly Resistive GaAs

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2020
Springer814959 Tokyo

2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), BuffaloBuffalo, NY, 8 Nov 2020 - 13 Nov 20202020-11-082020-11-13 Tokyo : Springer814959 1-2 () [10.1109/IRMMW-THz46771.2020.9370531]

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Abstract: Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free-space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studied the effect in several highly resistive GaAs samples and ascribe it to the Lorentz force that additionally accelerates optically excited carriers.

Classification:

Contributing Institute(s):
  1. Materialwissenschaft u. Werkstofftechnik (ER-C-2)
  2. Elektronische Materialien (IFF-6)
Research Program(s):
  1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2021
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 Record created 2021-03-17, last modified 2023-01-11


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