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| 001 | 891134 | ||
| 005 | 20230111074308.0 | ||
| 024 | 7 | _ | |a 10.1109/IRMMW-THz46771.2020.9370531 |2 doi |
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| 100 | 1 | _ | |a Chen, Genyu |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 111 | 2 | _ | |a 2020 45th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) |c Buffalo |d 2020-11-08 - 2020-11-13 |w NY |
| 245 | _ | _ | |a Magnetic-Field Enhancement of THz Surface Emission in Highly Resistive GaAs |
| 260 | _ | _ | |a Tokyo |c 2020 |b Springer814959 |
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| 520 | _ | _ | |a Irradiation of semiconductor surfaces with femtosecond optical laser pulses is one of the common techniques for broadband, free-space THz transient generation. We demonstrate that the amplitude of surface-emitted THz pulses scales linearly with an applied, external, in-plane magnetic field. We studied the effect in several highly resistive GaAs samples and ascribe it to the Lorentz force that additionally accelerates optically excited carriers. |
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| 773 | _ | _ | |a 10.1109/IRMMW-THz46771.2020.9370531 |
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