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@ARTICLE{Mendis:891503,
      author       = {Mendis, Budhika G. and Barthel, Juri and Findlay, Scott D.
                      and Allen, Leslie J.},
      title        = {{I}nelastic {S}cattering in {E}lectron {B}ackscatter
                      {D}iffraction and {E}lectron {C}hanneling {C}ontrast
                      {I}maging},
      journal      = {Microscopy and microanalysis},
      volume       = {26},
      number       = {6},
      issn         = {1435-8115},
      address      = {New York, NY},
      publisher    = {Cambridge University Press},
      reportid     = {FZJ-2021-01569},
      pages        = {1147 - 1157},
      year         = {2020},
      abstract     = {Electron backscatter diffraction (EBSD) and electron
                      channeling contrast imaging (ECCI) are used to extract
                      crystallographic information from bulk samples, such as
                      their crystal structure and orientation as well as the
                      presence of any dislocation and grain boundary defects.
                      These techniques rely on the backscattered electron signal,
                      which has a large distribution in electron energy. Here, the
                      influence of plasmon excitations on EBSD patterns and ECCI
                      dislocation images is uncovered by multislice simulations
                      including inelastic scattering. It is shown that the Kikuchi
                      band contrast in an EBSD pattern for silicon is maximum at
                      small energy loss (i.e., few plasmon scattering events
                      following backscattering), consistent with previous
                      energy-filtered EBSD measurements. On the other hand,
                      plasmon excitation has very little effect on the ECCI image
                      of a dislocation. These results are explained by examining
                      the role of the characteristic plasmon scattering angle on
                      the intrinsic contrast mechanisms in EBSD and ECCI.},
      cin          = {ER-C-2},
      ddc          = {500},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {33190677},
      UT           = {WOS:000596581400008},
      doi          = {10.1017/S1431927620024605},
      url          = {https://juser.fz-juelich.de/record/891503},
}