Journal Article

FZJ-2021-01569

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Inelastic Scattering in Electron Backscatter Diffraction and Electron Channeling Contrast Imaging

Mendis, B. G. (Corresponding author) ; Barthel, J.FZJ* ; Findlay, S. D. ; Allen, L. J.

2020
Cambridge University Press New York, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/27557  doi:10.1017/S1431927620024605

Abstract: Electron backscatter diffraction (EBSD) and electron channeling contrast imaging (ECCI) are used to extract crystallographic information from bulk samples, such as their crystal structure and orientation as well as the presence of any dislocation and grain boundary defects. These techniques rely on the backscattered electron signal, which has a large distribution in electron energy. Here, the influence of plasmon excitations on EBSD patterns and ECCI dislocation images is uncovered by multislice simulations including inelastic scattering. It is shown that the Kikuchi band contrast in an EBSD pattern for silicon is maximum at small energy loss (i.e., few plasmon scattering events following backscattering), consistent with previous energy-filtered EBSD measurements. On the other hand, plasmon excitation has very little effect on the ECCI image of a dislocation. These results are explained by examining the role of the characteristic plasmon scattering angle on the intrinsic contrast mechanisms in EBSD and ECCI.

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Contributing Institute(s):

1. Materialwissenschaft u. Werkstofftechnik (ER-C-2)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2021

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Database coverage:
; ; Allianz-Lizenz / DFG ; BIOSIS Previews ; Biological Abstracts ; Clarivate Analytics Master Journal List ; Current Contents - Life Sciences ; Current Contents - Physical, Chemical and Earth Sciences ; Essential Science Indicators ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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