TY  - JOUR
AU  - Ding, B.
AU  - Frentrup, M.
AU  - Fairclough, S. M.
AU  - Kappers, M. J.
AU  - Jain, M.
AU  - Kovács, A.
AU  - Wallis, D. J.
AU  - Oliver, R. A.
TI  - Alloy segregation at stacking faults in zincblende GaN heterostructures
JO  - Journal of applied physics
VL  - 128
IS  - 14
SN  - 1089-7550
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2021-01698
SP  - 145703 -
PY  - 2020
AB  - Current cubic zincblende III-Nitride epilayers grown on 3C-SiC/Si(001) substrates by metal-organic vapor-phase epitaxy contain a high density of stacking faults lying on the {111} planes. A combination of high-resolution scanning transmission electron microscopy and energy dispersive x-ray spectrometry is used to investigate the effects of alloy segregation around stacking faults in a zincblende III-nitride light-emitting structure, incorporating InGaN quantum wells and an AlGaN electron blocking layer. It is found that in the vicinity of the stacking faults, the indium and aluminum contents were a factor of 2.3 ± 1.3 and 1.9 ± 0.5 higher, respectively, than that in the surrounding material. Indium and aluminum are also observed to segregate differently in relation to stacking faults with indium segregating adjacent to the stacking fault while aluminum segregates directly on the stacking fault
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000582077700003
DO  - DOI:10.1063/5.0015157
UR  - https://juser.fz-juelich.de/record/891725
ER  -