Journal Article

FZJ-2021-01698

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Alloy segregation at stacking faults in zincblende GaN heterostructures

Ding, B. (Corresponding author) ; Frentrup, M. ; Fairclough, S. M. ; Kappers, M. J. ; Jain, M.FZJ* ; Kovács, A.FZJ* ; Wallis, D. J. ; Oliver, R. A.

2020
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/27616  doi:10.1063/5.0015157

Abstract: Current cubic zincblende III-Nitride epilayers grown on 3C-SiC/Si(001) substrates by metal-organic vapor-phase epitaxy contain a high density of stacking faults lying on the {111} planes. A combination of high-resolution scanning transmission electron microscopy and energy dispersive x-ray spectrometry is used to investigate the effects of alloy segregation around stacking faults in a zincblende III-nitride light-emitting structure, incorporating InGaN quantum wells and an AlGaN electron blocking layer. It is found that in the vicinity of the stacking faults, the indium and aluminum contents were a factor of 2.3 ± 1.3 and 1.9 ± 0.5 higher, respectively, than that in the surrounding material. Indium and aluminum are also observed to segregate differently in relation to stacking faults with indium segregating adjacent to the stacking fault while aluminum segregates directly on the stacking fault

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Contributing Institute(s):

1. Physik Nanoskaliger Systeme (ER-C-1)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2021

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; PubMed Central ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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