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@ARTICLE{Khler:891904,
      author       = {Köhler, Malte and Pomaska, Manuel and Procel, Paul and
                      Santbergen, Rudi and Zamchiy, Alexandr and Macco, Bart and
                      Lambertz, Andreas and Duan, Weiyuan and Cao, Pengfei and
                      Klingebiel, Benjamin and Li, Shenghao and Eberst, Alexander
                      and Luysberg, Martina and Qiu, Kaifu and Isabella, Olindo
                      and Finger, Friedhelm and Kirchartz, Thomas and Rau, Uwe and
                      Ding, Kaining},
      title        = {{A} silicon carbide-based highly transparent passivating
                      contact for crystalline silicon solar cells approaching
                      efficiencies of $24\%$},
      journal      = {Nature energy},
      volume       = {6},
      issn         = {2058-7546},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2021-01816},
      pages        = {529–537},
      year         = {2021},
      abstract     = {A highly transparent passivating contact (TPC) as front
                      contact for crystalline silicon (c-Si) solar cells could in
                      principle combine high conductivity, excellent surface
                      passivation and high optical transparency. However, the
                      simultaneous optimization of these features remains
                      challenging. Here, we present a TPC consisting of a
                      silicon-oxide tunnel layer followed by two layers of
                      hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n))
                      deposited at different temperatures and a sputtered indium
                      tin oxide (ITO) layer (c-Si(n)/SiO2/nc-SiC:H(n)/ITO). While
                      the wide band gap of nc-SiC:H(n) ensures high optical
                      transparency, the double layer design enables good
                      passivation and high conductivity translating into an
                      improved short-circuit current density
                      (40.87 mA cm−2), fill factor $(80.9\%)$ and efficiency
                      of $23.99 ± 0.29\%$ (certified). Additionally, this
                      contact avoids the need for additional hydrogenation or
                      high-temperature postdeposition annealing steps. We
                      investigate the passivation mechanism and working principle
                      of the TPC and provide a loss analysis based on numerical
                      simulations outlining pathways towards conversion
                      efficiencies of $26\%.$},
      cin          = {ER-C-1 / IEK-5},
      ddc          = {330},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)IEK-5-20101013},
      pnm          = {535 - Materials Information Discovery (POF4-535)},
      pid          = {G:(DE-HGF)POF4-535},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000640742200001},
      doi          = {10.1038/s41560-021-00806-9},
      url          = {https://juser.fz-juelich.de/record/891904},
}