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| 001 | 891904 | ||
| 005 | 20240712084515.0 | ||
| 024 | 7 | _ | |a 10.1038/s41560-021-00806-9 |2 doi |
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| 100 | 1 | _ | |a Köhler, Malte |0 P:(DE-Juel1)165230 |b 0 |e Corresponding author |
| 245 | _ | _ | |a A silicon carbide-based highly transparent passivating contact for crystalline silicon solar cells approaching efficiencies of 24% |
| 260 | _ | _ | |a London |c 2021 |b Nature Publishing Group |
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| 520 | _ | _ | |a A highly transparent passivating contact (TPC) as front contact for crystalline silicon (c-Si) solar cells could in principle combine high conductivity, excellent surface passivation and high optical transparency. However, the simultaneous optimization of these features remains challenging. Here, we present a TPC consisting of a silicon-oxide tunnel layer followed by two layers of hydrogenated nanocrystalline silicon carbide (nc-SiC:H(n)) deposited at different temperatures and a sputtered indium tin oxide (ITO) layer (c-Si(n)/SiO2/nc-SiC:H(n)/ITO). While the wide band gap of nc-SiC:H(n) ensures high optical transparency, the double layer design enables good passivation and high conductivity translating into an improved short-circuit current density (40.87 mA cm−2), fill factor (80.9%) and efficiency of 23.99 ± 0.29% (certified). Additionally, this contact avoids the need for additional hydrogenation or high-temperature postdeposition annealing steps. We investigate the passivation mechanism and working principle of the TPC and provide a loss analysis based on numerical simulations outlining pathways towards conversion efficiencies of 26%. |
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| 700 | 1 | _ | |a Isabella, Olindo |0 0000-0001-7673-0163 |b 14 |
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| 773 | _ | _ | |a 10.1038/s41560-021-00806-9 |0 PERI:(DE-600)2847369-3 |p 529–537 |t Nature energy |v 6 |y 2021 |x 2058-7546 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/891904/files/s41560-021-00806-9.pdf |y OpenAccess |
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