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@ARTICLE{Mi:892556,
      author       = {Mi, Xinrun and Wang, Xiao and Gui, Hengrui and Pi, Maocai
                      and Zheng, Tingting and Yang, Kunya and Gan, Yuhan and Wang,
                      Peipei and Li, Alei and Wang, Aifeng and Zhang, Liyuan and
                      Su, Yixi and Chai, Yisheng and He, Mingquan},
      title        = {{S}tacking faults in α−{R}u{C}l3 revealed by local
                      electric polarization},
      journal      = {Physical review / B},
      volume       = {103},
      number       = {17},
      issn         = {2469-9969},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2021-02155},
      pages        = {174413},
      year         = {2021},
      abstract     = {We present out-of-plane dielectric and magnetodielectric
                      measurements of single-crystalline α−RuCl3 with various
                      degrees of stacking faults. A frequency-dependent, but
                      field-independent, dielectric anomaly appears at
                      TA(f=100kHz)∼4 K once both magnetic transitions at TN1∼7
                      K and TN2∼14 K set in. The observed dielectric anomaly is
                      attributed to the emergence of possible local electric
                      polarizations whose inversion symmetry is broken by
                      inhomogeneously distributed stacking faults. A field-induced
                      intermediate phase is only observed when a magnetic field is
                      applied perpendicular to the Ru-Ru bonds for samples with
                      minimal stacking faults. Less pronounced in-plane anisotropy
                      is found in samples with a sizable contribution from
                      stacking imperfections. Our findings suggest that dielectric
                      measurement is a sensitive probe in detecting the structural
                      and magnetic properties, which may be a promising tool,
                      especially in studying α−RuCl3 thin-film devices.
                      Moreover, the stacking details of RuCl3 layers strongly
                      affect the ground state both in the magnetic and electric
                      channels. Such a fragile ground state against stacking
                      faults needs to be overcome for realistic applications
                      utilizing the magnetic and/or electric properties of
                      Kitaev-based physics in α−RuCl3.},
      cin          = {JCNS-FRM-II / JCNS-2 / JCNS-4},
      ddc          = {530},
      cid          = {I:(DE-Juel1)JCNS-FRM-II-20110218 /
                      I:(DE-Juel1)JCNS-2-20110106 / I:(DE-Juel1)JCNS-4-20201012},
      pnm          = {6G4 - Jülich Centre for Neutron Research (JCNS) (FZJ)
                      (POF4-6G4) / 632 - Materials – Quantum, Complex and
                      Functional Materials (POF4-632)},
      pid          = {G:(DE-HGF)POF4-6G4 / G:(DE-HGF)POF4-632},
      experiment   = {EXP:(DE-MLZ)NOSPEC-20140101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000655863000002},
      doi          = {10.1103/PhysRevB.103.174413},
      url          = {https://juser.fz-juelich.de/record/892556},
}