000894092 001__ 894092
000894092 005__ 20240712084518.0
000894092 0247_ $$2Handle$$a2128/28402
000894092 0247_ $$2URN$$aurn:nbn:de:0001-2021080422
000894092 020__ $$a978-3-95806-550-5
000894092 037__ $$aFZJ-2021-03032
000894092 1001_ $$0P:(DE-Juel1)165230$$aKöhler, Malte$$b0$$eCorresponding author
000894092 245__ $$aTransparent Passivating Contact for Crystalline Silicon Solar Cells$$f- 2021-08-04
000894092 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2021
000894092 300__ $$a186
000894092 3367_ $$2DataCite$$aOutput Types/Dissertation
000894092 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000894092 3367_ $$2ORCID$$aDISSERTATION
000894092 3367_ $$2BibTeX$$aPHDTHESIS
000894092 3367_ $$02$$2EndNote$$aThesis
000894092 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1628058588_22962
000894092 3367_ $$2DRIVER$$adoctoralThesis
000894092 4900_ $$aSchriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment$$v538
000894092 502__ $$aDissertation, RWTH Aachen University, 2020$$bDissertation$$cRWTH Aachen University$$d2020
000894092 520__ $$aThe goal of this work is to develop a transparent, passivating and conductivecontact for the light facing side of crystalline silicon solar cells. State of the artpassivating contacts show a very high passivation quality of the silicon surface aswell as a high electrical conductivity. However, due to their restricted transparencyand comparably high parasitic absorption for the incoming sunlight these contactsare not ideal for the use on the sun facing side of the solar cells. With the aim ofincreasing the efficiency of crystalline silicon solar cells, the need for a transparentpassivating contact arises.One material, which is suitable as a transparent passivating contact due to itshigh transparency and electrical conductivity, is n-type doped microcrystalline siliconcarbide (mc-SiC:H(n)). It was shown in literature, that depositing mc-SiC:H(n)using hot-wire chemical vapor deposition (HWCVD) directly on the crystalline siliconsurface leads to a deterioration of the passivation. Additionally it was shown,that using a thin silicon oxide (SiO2) in between the crystalline silicon and themc-SiC:H(n) can prevent this deterioration of the passivation while showing a hightransparency and high electrical conductivity. However, transferring these propertiesof the contact layer stack into a first working solar cell proved to be difficult.Despite the high passivation quality and the high conductivity of the material, neitherthe desired voltage nor a high fill factor could be achieved on solar cell level.The focus of this thesis is therefore on the systematic implementation of this layerstack in a silicon heterojunction solar cell.
000894092 536__ $$0G:(DE-HGF)POF4-899$$a899 - ohne Topic (POF4-899)$$cPOF4-899$$fPOF IV$$x0
000894092 8564_ $$uhttps://juser.fz-juelich.de/record/894092/files/Energie_Umwelt_538.pdf$$yOpenAccess
000894092 909CO $$ooai:juser.fz-juelich.de:894092$$pdnbdelivery$$pVDB$$pdriver$$purn$$popen_access$$popenaire
000894092 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000894092 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000894092 9141_ $$y2021
000894092 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165230$$aForschungszentrum Jülich$$b0$$kFZJ
000894092 9131_ $$0G:(DE-HGF)POF4-899$$1G:(DE-HGF)POF4-890$$2G:(DE-HGF)POF4-800$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000894092 920__ $$lyes
000894092 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
000894092 9801_ $$aFullTexts
000894092 980__ $$aphd
000894092 980__ $$aVDB
000894092 980__ $$aUNRESTRICTED
000894092 980__ $$abook
000894092 980__ $$aI:(DE-Juel1)IEK-5-20101013
000894092 981__ $$aI:(DE-Juel1)IMD-3-20101013