% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@PHDTHESIS{Khler:894092,
      author       = {Köhler, Malte},
      title        = {{T}ransparent {P}assivating {C}ontact for {C}rystalline
                      {S}ilicon {S}olar {C}ells},
      volume       = {538},
      school       = {RWTH Aachen University},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2021-03032},
      isbn         = {978-3-95806-550-5},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {186},
      year         = {2021},
      note         = {Dissertation, RWTH Aachen University, 2020},
      abstract     = {The goal of this work is to develop a transparent,
                      passivating and conductivecontact for the light facing side
                      of crystalline silicon solar cells. State of the
                      artpassivating contacts show a very high passivation quality
                      of the silicon surface aswell as a high electrical
                      conductivity. However, due to their restricted
                      transparencyand comparably high parasitic absorption for the
                      incoming sunlight these contactsare not ideal for the use on
                      the sun facing side of the solar cells. With the aim
                      ofincreasing the efficiency of crystalline silicon solar
                      cells, the need for a transparentpassivating contact
                      arises.One material, which is suitable as a transparent
                      passivating contact due to itshigh transparency and
                      electrical conductivity, is n-type doped microcrystalline
                      siliconcarbide (mc-SiC:H(n)). It was shown in literature,
                      that depositing mc-SiC:H(n)using hot-wire chemical vapor
                      deposition (HWCVD) directly on the crystalline
                      siliconsurface leads to a deterioration of the passivation.
                      Additionally it was shown,that using a thin silicon oxide
                      (SiO2) in between the crystalline silicon and themc-SiC:H(n)
                      can prevent this deterioration of the passivation while
                      showing a hightransparency and high electrical conductivity.
                      However, transferring these propertiesof the contact layer
                      stack into a first working solar cell proved to be
                      difficult.Despite the high passivation quality and the high
                      conductivity of the material, neitherthe desired voltage nor
                      a high fill factor could be achieved on solar cell level.The
                      focus of this thesis is therefore on the systematic
                      implementation of this layerstack in a silicon
                      heterojunction solar cell.},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {899 - ohne Topic (POF4-899)},
      pid          = {G:(DE-HGF)POF4-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2021080422},
      url          = {https://juser.fz-juelich.de/record/894092},
}