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@PHDTHESIS{Khler:894092,
author = {Köhler, Malte},
title = {{T}ransparent {P}assivating {C}ontact for {C}rystalline
{S}ilicon {S}olar {C}ells},
volume = {538},
school = {RWTH Aachen University},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2021-03032},
isbn = {978-3-95806-550-5},
series = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
Umwelt / Energy $\&$ Environment},
pages = {186},
year = {2021},
note = {Dissertation, RWTH Aachen University, 2020},
abstract = {The goal of this work is to develop a transparent,
passivating and conductivecontact for the light facing side
of crystalline silicon solar cells. State of the
artpassivating contacts show a very high passivation quality
of the silicon surface aswell as a high electrical
conductivity. However, due to their restricted
transparencyand comparably high parasitic absorption for the
incoming sunlight these contactsare not ideal for the use on
the sun facing side of the solar cells. With the aim
ofincreasing the efficiency of crystalline silicon solar
cells, the need for a transparentpassivating contact
arises.One material, which is suitable as a transparent
passivating contact due to itshigh transparency and
electrical conductivity, is n-type doped microcrystalline
siliconcarbide (mc-SiC:H(n)). It was shown in literature,
that depositing mc-SiC:H(n)using hot-wire chemical vapor
deposition (HWCVD) directly on the crystalline
siliconsurface leads to a deterioration of the passivation.
Additionally it was shown,that using a thin silicon oxide
(SiO2) in between the crystalline silicon and themc-SiC:H(n)
can prevent this deterioration of the passivation while
showing a hightransparency and high electrical conductivity.
However, transferring these propertiesof the contact layer
stack into a first working solar cell proved to be
difficult.Despite the high passivation quality and the high
conductivity of the material, neitherthe desired voltage nor
a high fill factor could be achieved on solar cell level.The
focus of this thesis is therefore on the systematic
implementation of this layerstack in a silicon
heterojunction solar cell.},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {899 - ohne Topic (POF4-899)},
pid = {G:(DE-HGF)POF4-899},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
urn = {urn:nbn:de:0001-2021080422},
url = {https://juser.fz-juelich.de/record/894092},
}