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001     894092
005     20240712084518.0
020 _ _ |a 978-3-95806-550-5
024 7 _ |2 Handle
|a 2128/28402
024 7 _ |2 URN
|a urn:nbn:de:0001-2021080422
037 _ _ |a FZJ-2021-03032
100 1 _ |0 P:(DE-Juel1)165230
|a Köhler, Malte
|b 0
|e Corresponding author
245 _ _ |a Transparent Passivating Contact for Crystalline Silicon Solar Cells
|f - 2021-08-04
260 _ _ |a Jülich
|b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag
|c 2021
300 _ _ |a 186
336 7 _ |2 DataCite
|a Output Types/Dissertation
336 7 _ |0 PUB:(DE-HGF)3
|2 PUB:(DE-HGF)
|a Book
|m book
336 7 _ |2 ORCID
|a DISSERTATION
336 7 _ |2 BibTeX
|a PHDTHESIS
336 7 _ |0 2
|2 EndNote
|a Thesis
336 7 _ |0 PUB:(DE-HGF)11
|2 PUB:(DE-HGF)
|a Dissertation / PhD Thesis
|b phd
|m phd
|s 1628058588_22962
336 7 _ |2 DRIVER
|a doctoralThesis
490 0 _ |a Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment
|v 538
502 _ _ |a Dissertation, RWTH Aachen University, 2020
|b Dissertation
|c RWTH Aachen University
|d 2020
520 _ _ |a The goal of this work is to develop a transparent, passivating and conductivecontact for the light facing side of crystalline silicon solar cells. State of the artpassivating contacts show a very high passivation quality of the silicon surface aswell as a high electrical conductivity. However, due to their restricted transparencyand comparably high parasitic absorption for the incoming sunlight these contactsare not ideal for the use on the sun facing side of the solar cells. With the aim ofincreasing the efficiency of crystalline silicon solar cells, the need for a transparentpassivating contact arises.One material, which is suitable as a transparent passivating contact due to itshigh transparency and electrical conductivity, is n-type doped microcrystalline siliconcarbide (mc-SiC:H(n)). It was shown in literature, that depositing mc-SiC:H(n)using hot-wire chemical vapor deposition (HWCVD) directly on the crystalline siliconsurface leads to a deterioration of the passivation. Additionally it was shown,that using a thin silicon oxide (SiO2) in between the crystalline silicon and themc-SiC:H(n) can prevent this deterioration of the passivation while showing a hightransparency and high electrical conductivity. However, transferring these propertiesof the contact layer stack into a first working solar cell proved to be difficult.Despite the high passivation quality and the high conductivity of the material, neitherthe desired voltage nor a high fill factor could be achieved on solar cell level.The focus of this thesis is therefore on the systematic implementation of this layerstack in a silicon heterojunction solar cell.
536 _ _ |0 G:(DE-HGF)POF4-899
|a 899 - ohne Topic (POF4-899)
|c POF4-899
|f POF IV
|x 0
856 4 _ |u https://juser.fz-juelich.de/record/894092/files/Energie_Umwelt_538.pdf
|y OpenAccess
909 C O |o oai:juser.fz-juelich.de:894092
|p openaire
|p open_access
|p urn
|p driver
|p VDB
|p dnbdelivery
910 1 _ |0 I:(DE-588b)5008462-8
|6 P:(DE-Juel1)165230
|a Forschungszentrum Jülich
|b 0
|k FZJ
913 1 _ |0 G:(DE-HGF)POF4-899
|1 G:(DE-HGF)POF4-890
|2 G:(DE-HGF)POF4-800
|3 G:(DE-HGF)POF4
|4 G:(DE-HGF)POF
|a DE-HGF
|b Programmungebundene Forschung
|l ohne Programm
|v ohne Topic
|x 0
914 1 _ |y 2021
915 _ _ |0 StatID:(DE-HGF)0510
|2 StatID
|a OpenAccess
915 _ _ |0 LIC:(DE-HGF)CCBY4
|2 HGFVOC
|a Creative Commons Attribution CC BY 4.0
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)IEK-5-20101013
|k IEK-5
|l Photovoltaik
|x 0
980 1 _ |a FullTexts
980 _ _ |a phd
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a book
980 _ _ |a I:(DE-Juel1)IEK-5-20101013
981 _ _ |a I:(DE-Juel1)IMD-3-20101013

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