000894689 001__ 894689
000894689 005__ 20220930130325.0
000894689 0247_ $$2doi$$a10.1088/1361-6641/ac1a28
000894689 0247_ $$2ISSN$$a0268-1242
000894689 0247_ $$2ISSN$$a1361-6641
000894689 0247_ $$2Handle$$a2128/28583
000894689 0247_ $$2WOS$$aWOS:000688245200001
000894689 037__ $$aFZJ-2021-03351
000894689 041__ $$aEnglish
000894689 082__ $$a620
000894689 1001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b0$$eCorresponding author
000894689 245__ $$aLocal increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
000894689 260__ $$aBristol$$bIOP Publ.$$c2021
000894689 3367_ $$2DRIVER$$aarticle
000894689 3367_ $$2DataCite$$aOutput Types/Journal article
000894689 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1630481532_6544
000894689 3367_ $$2BibTeX$$aARTICLE
000894689 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000894689 3367_ $$00$$2EndNote$$aJournal Article
000894689 520__ $$aWe fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa Additionally, an increase in sheet charge density in the devices under investigation from Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs ∼3.8×1012 cm−2 to ∼6.2×1012 cm−2 was evaluated by capacitance–voltage measurements. can significantly improve their device characteristics.Keywords:
000894689 536__ $$0G:(DE-HGF)POF4-5353$$a5353 - Understanding the Structural and Functional Behavior of Solid State Systems (POF4-535)$$cPOF4-535$$fPOF IV$$x0
000894689 588__ $$aDataset connected to CrossRef, Journals: juser.fz-juelich.de
000894689 7001_ $$0P:(DE-HGF)0$$aKordoš, P.$$b1
000894689 7001_ $$0P:(DE-HGF)0$$aGregušová, D.$$b2
000894689 7001_ $$0P:(DE-HGF)0$$aGaži, Š$$b3
000894689 7001_ $$0P:(DE-HGF)0$$aNovák, J.$$b4
000894689 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b5
000894689 7001_ $$0P:(DE-Juel1)130824$$aMayer, Joachim$$b6$$ufzj
000894689 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b7$$eCorresponding author
000894689 773__ $$0PERI:(DE-600)1361285-2$$a10.1088/1361-6641/ac1a28$$gVol. 36, no. 9, p. 095040 -$$n9$$p095040 -$$tSemiconductor science and technology$$v36$$x1361-6641$$y2021
000894689 8564_ $$uhttps://iopscience.iop.org/article/10.1088/1361-6641/ac1a28
000894689 8564_ $$uhttps://juser.fz-juelich.de/record/894689/files/Mikulics_2021_Semicond._Sci._Technol._36_095040.pdf$$yOpenAccess
000894689 8767_ $$d2021-12-30$$eHybrid-OA$$jOffsetting$$lOffsetting: IOP
000894689 909CO $$ooai:juser.fz-juelich.de:894689$$popenCost$$pVDB$$pdriver$$pOpenAPC$$popen_access$$popenaire$$pdnbdelivery
000894689 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128613$$aForschungszentrum Jülich$$b0$$kFZJ
000894689 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130824$$aForschungszentrum Jülich$$b6$$kFZJ
000894689 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125593$$aForschungszentrum Jülich$$b7$$kFZJ
000894689 9131_ $$0G:(DE-HGF)POF4-535$$1G:(DE-HGF)POF4-530$$2G:(DE-HGF)POF4-500$$3G:(DE-HGF)POF4$$4G:(DE-HGF)POF$$9G:(DE-HGF)POF4-5353$$aDE-HGF$$bKey Technologies$$lMaterials Systems Engineering$$vMaterials Information Discovery$$x0
000894689 9141_ $$y2021
000894689 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0160$$2StatID$$aDBCoverage$$bEssential Science Indicators$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)1230$$2StatID$$aDBCoverage$$bCurrent Contents - Electronics and Telecommunications Collection$$d2021-02-03
000894689 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000894689 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bSEMICOND SCI TECH : 2019$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0113$$2StatID$$aWoS$$bScience Citation Index Expanded$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000894689 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0430$$2StatID$$aNational-Konsortium$$d2021-02-03$$wger
000894689 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline$$d2021-02-03
000894689 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz$$d2021-02-03$$wger
000894689 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bClarivate Analytics Master Journal List$$d2021-02-03
000894689 920__ $$lyes
000894689 9201_ $$0I:(DE-Juel1)ER-C-2-20170209$$kER-C-2$$lMaterialwissenschaft u. Werkstofftechnik$$x0
000894689 9801_ $$aFullTexts
000894689 980__ $$ajournal
000894689 980__ $$aVDB
000894689 980__ $$aUNRESTRICTED
000894689 980__ $$aI:(DE-Juel1)ER-C-2-20170209
000894689 980__ $$aAPC