Journal Article

FZJ-2021-03351

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer

Mikulics, M. (Corresponding author)FZJ* ; Kordoš, P. ; Gregušová, D. ; Gaži, Š. ; Novák, J. ; Sofer, Z. ; Mayer, J.FZJ* ; Hardtdegen, H. (Corresponding author)FZJ*

2021
IOP Publ. Bristol

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Please use a persistent id in citations: http://hdl.handle.net/2128/28583  doi:10.1088/1361-6641/ac1a28

Abstract: We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa Additionally, an increase in sheet charge density in the devices under investigation from Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs ∼3.8×1012 cm−2 to ∼6.2×1012 cm−2 was evaluated by capacitance–voltage measurements. can significantly improve their device characteristics.Keywords:

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Contributing Institute(s):

1. Materialwissenschaft u. Werkstofftechnik (ER-C-2)

Research Program(s):

1. 5353 - Understanding the Structural and Functional Behavior of Solid State Systems (POF4-535) (POF4-535)

Appears in the scientific report 2021

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Database coverage:
; ; ; Clarivate Analytics Master Journal List ; Current Contents - Electronics and Telecommunications Collection ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; Essential Science Indicators ; IF < 5 ; JCR ; National-Konsortium ; Nationallizenz ; SCOPUS ; Science Citation Index Expanded ; Web of Science Core Collection

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