TY  - JOUR
AU  - Mikulics, M.
AU  - Kordoš, P.
AU  - Gregušová, D.
AU  - Gaži, Š
AU  - Novák, J.
AU  - Sofer, Z.
AU  - Mayer, Joachim
AU  - Hardtdegen, H.
TI  - Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
JO  - Semiconductor science and technology
VL  - 36
IS  - 9
SN  - 1361-6641
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2021-03351
SP  - 095040 -
PY  - 2021
AB  - We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa Additionally, an increase in sheet charge density in the devices under investigation from Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs ∼3.8×1012 cm−2 to ∼6.2×1012 cm−2 was evaluated by capacitance–voltage measurements. can significantly improve their device characteristics.Keywords:
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000688245200001
DO  - DOI:10.1088/1361-6641/ac1a28
UR  - https://juser.fz-juelich.de/record/894689
ER  -