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@ARTICLE{Mikulics:894689,
      author       = {Mikulics, M. and Kordoš, P. and Gregušová, D. and Gaži,
                      Š and Novák, J. and Sofer, Z. and Mayer, Joachim and
                      Hardtdegen, H.},
      title        = {{L}ocal increase in compressive strain ({G}a{N}) in gate
                      recessed {A}l{G}a{N}/{G}a{N} {MISHFET} structures induced by
                      an amorphous {A}l{N} dielectric layer},
      journal      = {Semiconductor science and technology},
      volume       = {36},
      number       = {9},
      issn         = {1361-6641},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2021-03351},
      pages        = {095040 -},
      year         = {2021},
      abstract     = {We fabricated and characterized metal insulator
                      semiconductor (MIS) structures by applying amorphous AlN
                      thin layers as a dielectric in gate recessed AlGaN/GaN
                      heterostructure field effect transistors (HFETs). Micro
                      photoluminescence measurements performed on MISHFET devices
                      reveal a local non-uniform distribution of strain in the
                      source—gate recess—drain region. Furthermore, a
                      reduction of compressive stress up to 0.3 GPa in GaN after
                      gate after the deposition of 4 and 6 nm thin AlN layers in
                      the gate recessed structures, respectively. recessing was
                      experimentally determined. The local stress increases by
                      ∼0.1 GPa and ∼0.2 GPa Additionally, an increase in sheet
                      charge density in the devices under investigation from
                      Therefore, strain engineering by applying amorphous AlN
                      layers in gate recessed MISHFETs ∼3.8×1012 cm−2 to
                      ∼6.2×1012 cm−2 was evaluated by capacitance–voltage
                      measurements. can significantly improve their device
                      characteristics.Keywords:},
      cin          = {ER-C-2},
      ddc          = {620},
      cid          = {I:(DE-Juel1)ER-C-2-20170209},
      pnm          = {5353 - Understanding the Structural and Functional Behavior
                      of Solid State Systems (POF4-535)},
      pid          = {G:(DE-HGF)POF4-5353},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000688245200001},
      doi          = {10.1088/1361-6641/ac1a28},
      url          = {https://juser.fz-juelich.de/record/894689},
}