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| Hauptseite > Publikationsdatenbank > Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer > print |
| Hauptseite > Publikationsdatenbank > Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer > print |
| 001 | 894689 | ||
| 005 | 20220930130325.0 | ||
| 024 | 7 | _ | |a 10.1088/1361-6641/ac1a28 |2 doi |
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| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2021-03351 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Mikulics, M. |0 P:(DE-Juel1)128613 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer |
| 260 | _ | _ | |a Bristol |c 2021 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa Additionally, an increase in sheet charge density in the devices under investigation from Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs ∼3.8×1012 cm−2 to ∼6.2×1012 cm−2 was evaluated by capacitance–voltage measurements. can significantly improve their device characteristics.Keywords: |
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| 700 | 1 | _ | |a Kordoš, P. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Gregušová, D. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Gaži, Š |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Novák, J. |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Sofer, Z. |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Mayer, Joachim |0 P:(DE-Juel1)130824 |b 6 |u fzj |
| 700 | 1 | _ | |a Hardtdegen, H. |0 P:(DE-Juel1)125593 |b 7 |e Corresponding author |
| 773 | _ | _ | |a 10.1088/1361-6641/ac1a28 |g Vol. 36, no. 9, p. 095040 - |0 PERI:(DE-600)1361285-2 |n 9 |p 095040 - |t Semiconductor science and technology |v 36 |y 2021 |x 1361-6641 |
| 856 | 4 | _ | |u https://iopscience.iop.org/article/10.1088/1361-6641/ac1a28 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/894689/files/Mikulics_2021_Semicond._Sci._Technol._36_095040.pdf |y OpenAccess |
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