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024 7 _ |a 10.1088/1361-6641/ac1a28
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037 _ _ |a FZJ-2021-03351
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082 _ _ |a 620
100 1 _ |a Mikulics, M.
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245 _ _ |a Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
260 _ _ |a Bristol
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520 _ _ |a We fabricated and characterized metal insulator semiconductor (MIS) structures by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN heterostructure field effect transistors (HFETs). Micro photoluminescence measurements performed on MISHFET devices reveal a local non-uniform distribution of strain in the source—gate recess—drain region. Furthermore, a reduction of compressive stress up to 0.3 GPa in GaN after gate after the deposition of 4 and 6 nm thin AlN layers in the gate recessed structures, respectively. recessing was experimentally determined. The local stress increases by ∼0.1 GPa and ∼0.2 GPa Additionally, an increase in sheet charge density in the devices under investigation from Therefore, strain engineering by applying amorphous AlN layers in gate recessed MISHFETs ∼3.8×1012 cm−2 to ∼6.2×1012 cm−2 was evaluated by capacitance–voltage measurements. can significantly improve their device characteristics.Keywords:
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700 1 _ |a Kordoš, P.
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700 1 _ |a Gregušová, D.
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700 1 _ |a Gaži, Š
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700 1 _ |a Novák, J.
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700 1 _ |a Sofer, Z.
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700 1 _ |a Mayer, Joachim
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700 1 _ |a Hardtdegen, H.
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773 _ _ |a 10.1088/1361-6641/ac1a28
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856 4 _ |u https://iopscience.iop.org/article/10.1088/1361-6641/ac1a28
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