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@ARTICLE{Li:897320,
      author       = {Li, Shenghao and Pomaska, Manuel and Lambertz, Andreas and
                      Duan, Weiyuan and Bittkau, Karsten and Qiu, Depeng and Yao,
                      Zhirong and Luysberg, Martina and Steuter, Paul and Köhler,
                      Malte and Qiu, Kaifu and Hong, Ruijiang and Shen, Hui and
                      Finger, Friedhelm and Kirchartz, Thomas and Rau, Uwe and
                      Ding, Kaining},
      title        = {{T}ransparent-conductive-oxide-free front contacts for
                      high-efficiency silicon heterojunction solar cells},
      journal      = {Joule},
      volume       = {5},
      number       = {6},
      issn         = {2542-4351},
      address      = {[Cambridge, Mass.]},
      publisher    = {Cell Press},
      reportid     = {FZJ-2021-03729},
      pages        = {1535 - 1547},
      year         = {2021},
      abstract     = {In order to compensate the insufficient conductance of
                      heterojunction thin films, transparent conductive oxides
                      (TCO) have been used for decades in both sides of contacted
                      crystalline silicon heterojunction (SHJ) solar cells to
                      provide lateral conduction for carrier collection. In this
                      work, we substitute the TCO layers by utilizing the lateral
                      conduction of c-Si absorber, thereby enabling a TCO-free
                      design for SHJ solar cells achieving a low series
                      resistivity of 0.32 Ucm2 and a good fill factor of $80.7\%$
                      with a conventional finger pitch of 1.8 mm. Achieving high
                      efficiencies in TCO-free SHJ solar cells requires
                      suppressing deterioration of the passivation quality induced
                      by the direct metal-to-a-Si:H contacts. We show that an
                      ozone treatment at the a-Si:H/metal interface suppresses the
                      metal diffusion into the a-Si:H layer and improves the
                      passivation without increasing the contact resistivity. SHJ
                      solar cells with TCO-free front contacts and ozone treatment
                      achieve efficiencies of $>22\%.$},
      cin          = {IEK-5},
      ddc          = {333.7},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {1213 - Cell Design and Development (POF4-121) /
                      Verbundvorhaben: TuKaN - Tunnelkontakte auf N-Typ: für die
                      Metallisierung mit Siebdruck, Teilvorhaben: Herstellung von
                      Solarzellen mit passivierendem Tunnelkontakt und
                      funktionalen Schichten aus katalytischer und
                      plasmaunterstützter chemischer Gasphasenab (0324198D)},
      pid          = {G:(DE-HGF)POF4-1213 / G:(BMWi)0324198D},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000663028600018},
      doi          = {10.1016/j.joule.2021.04.004},
      url          = {https://juser.fz-juelich.de/record/897320},
}