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| Home > Publications database > Transparent-conductive-oxide-free front contacts for high-efficiency silicon heterojunction solar cells |
| Journal Article | FZJ-2021-03729 |
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2021
Cell Press
[Cambridge, Mass.]
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Please use a persistent id in citations: http://hdl.handle.net/2128/29239 doi:10.1016/j.joule.2021.04.004
Abstract: In order to compensate the insufficient conductance of heterojunction thin films, transparent conductive oxides (TCO) have been used for decades in both sides of contacted crystalline silicon heterojunction (SHJ) solar cells to provide lateral conduction for carrier collection. In this work, we substitute the TCO layers by utilizing the lateral conduction of c-Si absorber, thereby enabling a TCO-free design for SHJ solar cells achieving a low series resistivity of 0.32 Ucm2 and a good fill factor of 80.7% with a conventional finger pitch of 1.8 mm. Achieving high efficiencies in TCO-free SHJ solar cells requires suppressing deterioration of the passivation quality induced by the direct metal-to-a-Si:H contacts. We show that an ozone treatment at the a-Si:H/metal interface suppresses the metal diffusion into the a-Si:H layer and improves the passivation without increasing the contact resistivity. SHJ solar cells with TCO-free front contacts and ozone treatment achieve efficiencies of >22%.
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