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@PHDTHESIS{Liu:903222,
      author       = {Liu, Yong},
      title        = {{C}atalytic-doping of {S}ilicon {A}lloys for the {U}se in
                      {S}ilicon {H}eterojunction {S}olar {C}ells},
      volume       = {556},
      school       = {RWTH Aachen University},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2021-04929},
      isbn         = {978-3-95806-591-8},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {126},
      year         = {2021},
      note         = {Dissertation, RWTH Aachen University, 2021},
      abstract     = {To make this planet cleaner and more sustainable,
                      photovoltaic (PV) has longbeen on its road to pursue higher
                      eciency () and larger market share. Siliconheterojunction
                      (SHJ) solar cell is considered as one of the most promising
                      candidatesas next-generation high-eciency PV techniques due
                      to their high eciencies andsimple production sequences.
                      Eciency over $26\%$ in research level and over $23\%$ inmass
                      production have been achieved based on SHJ concept. However,
                      there are stillseveral eciency-limiting issues for SHJ solar
                      cells. The rst one is the parasiticabsorption in short
                      wavelength range caused by front side doped
                      amorphous(a-Si:H)layers. Many new materials (such as c-Si:H,
                      nc-SiOx:H and c-SiC:H) have beenproposed to overcome this
                      problem, yet the trade-o between optical and
                      electricalproperties still exists. The second one is that
                      sucient thickness of a-Si:H(i) layeris needed for good
                      passivation, but the a-Si:H(i) layer acts as isolation for
                      electricaltransport. Therefore, another trade-o exists
                      between passivation and electricaltransport.},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {899 - ohne Topic (POF4-899)},
      pid          = {G:(DE-HGF)POF4-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2022011200},
      url          = {https://juser.fz-juelich.de/record/903222},
}