Book/Dissertation / PhD Thesis

FZJ-2021-04929

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Catalytic-doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells

Liu, Y. (Corresponding author)FZJ*

2021
Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag Jülich
ISBN: 978-3-95806-591-8

Please use a persistent id in citations: http://hdl.handle.net/2128/30129  urn:nbn:de:0001-2022011200

Abstract: To make this planet cleaner and more sustainable, photovoltaic (PV) has longbeen on its road to pursue higher eciency () and larger market share. Siliconheterojunction (SHJ) solar cell is considered as one of the most promising candidatesas next-generation high-eciency PV techniques due to their high eciencies andsimple production sequences. Eciency over 26% in research level and over 23% inmass production have been achieved based on SHJ concept. However, there are stillseveral eciency-limiting issues for SHJ solar cells. The rst one is the parasiticabsorption in short wavelength range caused by front side doped amorphous(a-Si:H)layers. Many new materials (such as c-Si:H, nc-SiOx:H and c-SiC:H) have beenproposed to overcome this problem, yet the trade-o between optical and electricalproperties still exists. The second one is that sucient thickness of a-Si:H(i) layeris needed for good passivation, but the a-Si:H(i) layer acts as isolation for electricaltransport. Therefore, another trade-o exists between passivation and electricaltransport.

Note: Dissertation, RWTH Aachen University, 2021

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Contributing Institute(s):

1. Photovoltaik (IEK-5)

Research Program(s):

1. 899 - ohne Topic (POF4-899) (POF4-899)

Appears in the scientific report 2021

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Database coverage:
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